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SiC Epi (°æ·Â)
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[´ã´ç¾÷¹«] SiC¹°Áú ±â¹Ý power device Çâ Epi °øÁ¤ °³¹ß ¹× Æò°¡ - ´ë¸éÀû(8") SiC Epi °øÁ¤(±¸Á¶, Recipe) °³¹ß - ´ë¸éÀû(8") SiC Epi ºÐ¼® ¹× WBG Epi Ư¼º/ ½Å·Ú¼º Æò°¡ - MOCVD ¼³ºñ °ü¸®/¿î¿µ - SiC °³¹ß/¾ç»ê ¹× ¼³ºñ °ü¸®/¿î¿µ ¹× ¾ç»ê PI ¾÷¹« ´ëÀÀ [±Ù¹«ºÎ¼ ¹× Á÷±Þ/Á÷Ã¥]
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[ÀÚ°Ý¿ä°Ç] - ÇзÂ: ÇлçÀÌ»ó - °æ·Â: 3³âÀÌ»ó - SiC Epi(¡Ã6") °³¹ß/Æò°¡ °æÇè - SiC Epi ¿ë High temp CVD °ü¸®/¿î¿µ°æÇè(¡Ã3³â)
[¿ì´ë»çÇ×] - SiC Device operation ÀÌÇØ - SiC(8") Device operation ÀÌÇØ - Aixtron SiC MOCVD ¿î¿µ °æÇè - Power Á¦Ç°°³¹ß °æ·Â 3³â ÀÌ»ó(¼®»ç), 5³â ÀÌ»ó(Çлç)
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